參數資料
型號： V53C668H
廠商： Mosel Vitelic, Corp.
英文描述： High Performance 64K x 16 Bit EDO Page Mode Byte Write CMOS Dynamic RAM(高性能64Kx16EDO頁面模式可寫CMOS動態(tài)RAM)
中文描述： 高性能64K的× 16位EDO公司頁面模式字節(jié)寫的CMOS動態(tài)RAM（高性能64Kx16EDO頁面模式可寫的CMOS動態(tài)內存）
文件頁數： 5/28頁
文件大?。?/td> 243K
代理商： V53C668H
MOSEL V ITELIC
V53C668H
5
V53C668H Rev. 1.1 February 1999
AC Characteristics
T
A
= 0
°
C to 70
AC Test conditions, input pulse levels 0 to 3V
°
C, V
CC
= 5 V
±
10%, V
SS
= 0V unless otherwise noted
Symbol
Parameter
30
35
40
45
50
Unit
Notes
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
t
RAS
RAS Pulse Width
30
75K
35
75K
40
75K
45
75K
50
75K
ns
t
RC
Read or Write Cycle Time
65
70
75
80
90
ns
t
RP
RAS Precharge Time
25
25
25
25
30
ns
t
CSH
CAS Hold Time
30
35
40
45
50
ns
t
CAS
CAS Pulse Width
5
6
7
8
9
ns
t
RCD
RAS to CAS Delay
15
20
16
24
17
28
18
32
19
36
ns
t
RCS
Read Command Setup Time
0
0
0
0
0
ns
4
t
ASR
Row Address Setup Time
0
0
0
0
0
ns
t
RAH
Row Address Hold Time
5
6
7
8
9
ns
t
ASC
Column Address Setup Time
0
0
0
0
0
ns
t
CAH
Column Address Hold Time
5
5
5
6
7
ns
t
RSH (R)
RAS Hold Time (Read Cycle)
10
10
10
10
10
ns
t
CRP
CAS to RAS Precharge Time
5
5
5
5
5
ns
t
RCH
Read Command Hold Time
Referenced to CAS
0
0
0
0
0
ns
5
t
RRH
Read Command Hold Time
Referenced to RAS
0
0
0
0
0
ns
5
t
ROH
RAS Hold Time Referenced to OE
6
7
8
9
10
ns
t
OAC
Access Time from OE
10
11
12
13
14
ns
12
t
CAC
Access Time from CAS
10
11
12
13
14
ns
6,7,14
t
RAC
Access Time from RAS
30
35
40
45
50
ns
6, 8, 9
t
CAA
Access Time from Column Address
16
18
20
22
24
ns
6,7,10
t
LZ
OE or CAS to Low-Z Output
0
0
0
0
0
ns
16
t
HZ
OE or CAS to High-Z Output
0
5
0
6
0
6
0
7
0
8
ns
16
t
AR
Column Address Hold Time from RAS
26
28
30
35
40
ns
t
RAD
RAS to Column Address Delay
Time
10
14
11
17
12
20
13
23
14
26
ns
11
t
RSH (W)
RAS or CAS Hold Time in Write
Cycle
10
10
10
10
10
ns
t
CWL
Write Command to CAS Lead Time
10
11
12
13
14
ns
t
WCS
Write Command Setup Time
0
0
0
0
0
ns
12, 13
t
WCH
Write Command Hold Time
5
5
5
6
7
ns
t
WP
Write Pulse Width
5
5
5
6
7
ns
t
WCR
Write Command Hold Time from RAS
26
28
30
35
40
ns
t
RWL
Write Command to RAS Lead Time
10
11
12
13
14
ns
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