參數(shù)資料
型號(hào): V53C668H
廠商: Mosel Vitelic, Corp.
英文描述: High Performance 64K x 16 Bit EDO Page Mode Byte Write CMOS Dynamic RAM(高性能64Kx16EDO頁面模式可寫CMOS動(dòng)態(tài)RAM)
中文描述: 高性能64K的× 16位EDO公司頁面模式字節(jié)寫的CMOS動(dòng)態(tài)RAM(高性能64Kx16EDO頁面模式可寫的CMOS動(dòng)態(tài)內(nèi)存)
文件頁數(shù): 1/28頁
文件大?。?/td> 243K
代理商: V53C668H
MOSEL V ITELIC
1
V53C668H
HIGH PERFORMANCE
64K x 16 BIT EDO PAGE MODE
BYTE WRITE CMOS DYNAMIC RAM
PRELIMINARY
V53C668H Rev. 1.1 February 1999
HIGH PERFORMANCE
30
35
40
45
50
Max. RAS Access Time, (t
RAC
)
30 ns
35 ns
40 ns
45 ns
50 ns
Max. Column Address Access Time, (t
CAA
)
16 ns
18 ns
20 ns
22 ns
24 ns
Min. Extended Data Out Page Mode Cycle Time, (t
PC
)
12 ns
14 ns
15 ns
17 ns
19 ns
Min. Read/Write Cycle Time, (t
RC
)
65 ns
70 ns
75 ns
80 ns
90 ns
Features
I
64K x 16-bit organization
I
EDO Page Mode for a sustained data rate
of 83 MHz
I
RAS access time: 30, 35, 40, 45, 50 ns
I
Dual WE Inputs
I
Low Power Dissipation
I
Read-Modify-Write, RAS-Only Refresh,
CAS-Before-RAS Refresh
I
Refresh Interval: 256 cycles/4ms
I
Available in 40-pin 400 mil SOJ and 40/44L-pin
400 mil TSOP-II packages
I
Single +5V
±
10% Power Supply
I
TTL Interface
Description
The V53C668H is a 65,536 x 16 bit high-
performance CMOS dynamic random access
memory. The V53C668H offers Page mode with
Extended Data Output. EDO Page Mode operation
allows random access up to 256 x 16 bits, within a
page, with cycle times as short as 12 ns. An
address, CAS and RAS input capacitances are
reduced to minimize the loading. The V53C668H
has symmetric address 8-bit row and 8-bit column.
All inputs are TTL compatible. The V53C668H is
best suited for graphics, and DSP applications
requiring high performance memories.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Power
Temperature
Mark
K
T
30
35
40
45
50
Std.
0
°
C to 70
°
C
Blank
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PDF描述
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V53C806H High Performance 1M x 8 Bit Fast Page Mode CMOS Dynamic RAM(高性能1Mx8快速頁面模式CMOS動(dòng)態(tài)RAM)
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