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參數(shù)資料
| 型號： | UT8Q1024K8-UWX |
| 廠商： | Aeroflex Inc. |
| 英文描述： | high-performance 1M byte (8Mbit) CMOS static RAM |
| 中文描述： | 高性能1M字節(jié)（8Mbit）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 238K |
| 代理商： | UT8Q1024K8-UWX |
8
AC CHARACTERISTICS WRITE CYCLE (Pre/Post-Radiation)*
(-40
°
C to +125
°
C) (V
DD
= 3.3V + 0.3)
Notes
:
* Post-radiation performance guaranteed at 25
°
C per MIL-STD-883 Method 1019.
1. Functional test performed with outputs disabled (G high).
2. Three-state is defined as 300mV change from steady-state output voltage.
SYMBOL
PARAMETER
MIN
MAX
UNIT
t
AVAV1
Write cycle time
25
ns
t
ETWH
Device Enable to end of write
20
ns
t
AVET
Address setup time for write (En - controlled)
0
ns
t
AVWL
Address setup time for write (Wn - controlled)
0
ns
t
WLWH
Write pulse width
20
ns
t
WHAX
Address hold time for write (Wn - controlled)
2
ns
t
EFAX
Address hold time for Device Enable (En - controlled)
2
ns
t
WLQZ
2
Wn- controlled three-state time
10
ns
t
WHQX2
Wn - controlled Output Enable time
5
ns
t
ETEF
Device Enable pulse width (En - controlled)
20
ns
t
DVWH
Data setup time
15
ns
t
WHDX
2
Data hold time
2
ns
t
WLEF
Device Enable controlled write pulse width
20
ns
t
DVEF
2
Data setup time
15
ns
t
EFDX
Data hold time
2
ns
t
AVWH
Address valid to end of write
20
ns
t
WHWL
1
Write disable time
5
ns
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