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參數(shù)資料
| 型號： | UT8Q1024K8-UWX |
| 廠商： | Aeroflex Inc. |
| 英文描述： | high-performance 1M byte (8Mbit) CMOS static RAM |
| 中文描述： | 高性能1M字節(jié)（8Mbit）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 238K |
| 代理商： | UT8Q1024K8-UWX |
6
AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*
(-40
°
C to +125
°
C) (V
DD
= 3.3V + 0.3)
Notes:
* Post-radiation performance guaranteed at 25
°
C per MIL-STD-883 Method 1019.
1. Functional test.
2. Three-state is defined as a 300mV change from steady-state output voltage.
3. The ET (enable true) notation refers to the falling edge of En. SEU immunity does not affect the read parameters.
4. The EF (enable false) notation refers to the rising edge of En. SEU immunity does not affect the read parameters.
SYMBOL
PARAMETER
MIN
MAX
UNIT
t
AVAV1
Read cycle time
25
ns
t
AVQV
Read access time
25
ns
t
AXQX2
Output hold time
3
ns
t
GLQX
2
G-controlled Output Enable time
0
ns
t
GLQV
G-controlled Output Enable time (Read Cycle 3)
10
ns
t
GHQZ
2
G-controlled output three-state time
10
ns
t
ETQX
2,3
En-controlled Output Enable time
3
ns
t
ETQV
3
En-controlled access time
25
ns
t
EFQZ1,2,4
En-controlled output three-state time
10
ns
{
{
}
}
V
LOAD
+ 300mV
V
LOAD
- 300mV
V
LOAD
V
H
- 300mV
V
L
+ 300mV
Active to High Z Levels
High Z to Active Levels
Figure 3. 3-Volt SRAM Loading
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