參數(shù)資料
型號: UT62L25616BS-55LI
廠商: Electronic Theatre Controls, Inc.
英文描述: 256K X 16 BIT LOW POWER CMOS SRAM
中文描述: 256 × 16位低功耗CMOS SRAM
文件頁數(shù): 3/12頁
文件大?。?/td> 203K
代理商: UT62L25616BS-55LI
UTRON
UT62L25616(I)
Rev. 1.1
256K X 16 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUM RATINGS
*
PARAMETER
SYMBOL
Terminal Voltage with Respect to V
SS
Operating Temperature
Industrial
Storage Temperature
Power Dissipation
DC Output Current
Soldering Temperature (under 10 secs)
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 2.7V~3.6V, TA = -40
to 85
(I))
PARAMETER
SYMBOL
TEST CONDITION
Power Voltage
V
CC
Input High Voltage
V
IH
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
SS
V
IN
V
CC
Output Leakage Current
I
LO
V
SS
V
I/O
V
CC;
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2.1mA
Operating Power
Supply Current
I/O=0mA, CE=V
IL
;
UTRON TECHNOLOGY INC. P80054
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
3
RATING
-0.5 to 4.6
-40 to 85
-65 to +150
1
50
260
UNIT
V
W
mA
V
TERM
T
A
T
STG
P
D
I
OUT
Tsolder
MIN. TYP.
2.7
2.0
-0.2
- 1
- 1
2.2
-
-
-
-
-
MAX.
3.6
V
CC
+0.3
0.6
1
1
-
0.4
45
35
25
5
UNIT
V
V
V
μA
μA
V
V
mA
mA
mA
mA
3.0
-
-
-
-
-
-
30
25
20
4
55
70
100
I
CC
Cycle time=min, 100%duty,
Icc1
Cycle time=1μs,100%duty,I/O=0mA,
CE
0.2V,other pins at 0.2V or Vcc-0.2V,
Cycle time=500ns,100%duty,I/O=0mA,
CE
0.2V,other pins at 0.2V or Vcc-0.2V,
CE=V
IH,
other pins =V
IL
or V
IH
,
CE=V
CC
-0.2V,
other pins at 0.2V or Vcc-0.2V,
Average Operation
Current
Icc2
-
8
10
mA
Standby Current (TTL)
Standby Current (CMOS)
I
SB
I
SB1
-
-
-
0.3
20
3
0.5
80
25
mA
μA
μA
-L
-LL
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