參數(shù)資料
型號(hào): US112N-6
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 晶閘管
英文描述: 12 A, 600 V, SCR, TO-220AB
封裝: TO-220, 3 PIN
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 197K
代理商: US112N-6
UTC US112S/N
SCR
UTC UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-013,B
Fig.6: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values) (US112S)
0.1
10.0
1.0
0.2
0.0
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
1.0
0.8
0.6
0.4
1.2
Tj=125℃
VD=0.67* VDRM
Rgk(Ω)
Fig.7: Relative variation of dV/dt immunity vs gate-
cathode capacitance(typical values) (US112S)
0.0
4.0
2.0
25
0
dV/dt(Cgk)/dV/dt(Rgk=220Ω)
125
100
75
50
150
VD=0.67* VDRM
Tj=125℃
Rgk=220Ω
Cgk(nF)
0.5
1.0
1.5
2.5
3.0
3.5
Fig.8: Surge peak on-state current vs number of cycles
0.1
10.0
1.0
0.2
0.0
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
1.0
0.8
0.6
0.4
1.2
Tj=125℃
VD=0.67* VDRM
Rgk(Ω)
Fig.9:Non-repetitive surge peak on-state current for a
sinusoidal pulse with width tp<10ms, and corresponding
values of I t.
2
10
100
0.10
1.00
10.00
0.01
ITSM(A),I t(A s)
tp(ms)
2
1000
dI/dt
limitation
ITSM
Tjinitial=25℃
US112N
US112S
US112N
US112S
2000
Fig.10: On-state characteristics(maximum values).
Figure.5:Relative variation of holding current vs
gate-cathode resistance(typical values)
(US112S)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
IH(Rgk)/IH(Rgk=1kΩ)
1E-2
1E-1
1E+0
Rgk(kΩ)
0.5
0.0
Ta=25℃
1E+1
I t
2
1
10
200
0.5
1.0
1.5
0.0
ITSM
100
4.5
4.0
3.5
3.0
2.5
2.0
5.0
VTM(V)
Tj=max:
Vto=0.85V
Rd=30mΩ
Tj=25℃
Tj=Tjmax.
相關(guān)PDF資料
PDF描述
US112N-8 12 A, 800 V, SCR, TO-220AB
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US112S-6 12 A, 600 V, SCR, TO-220AB
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USF05G49 0.8 A, 400 V, SCR
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