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參數資料
| 型號： | USF05G49 |
| 元件分類： | 晶閘管 |
| 英文描述： | 0.8 A, 400 V, SCR |
| 封裝： | 13-5B1A, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 351K |
| 代理商： | USF05G49 |
USF05G49
2004-07-06
1
Note:
Should be used with
gate resistance as
shown below.
TOSHIBA THYRISTOR SILICON PLANAR TYPE
USF05G49
LOW POWER SWITCHING AND CONTROL
APPLICATIONS
Repetitive Peak OffState Voltage : VDRM = 400 V
Repetitive Peak Reverse Voltage
: VRRM = 400 V
Average OnState Current
: IT (AV) = 500 mA
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak OffState Voltage
and Repetitive Peak Reverse
Voltage
VDRM
VRRM
400
V
Non-Repetitive Peak Reverse Voltage
(NonRepetitive<5ms, Tj = 0~125°C)
VRSM
500
V
Average OnState Current
(Half Sine Waveform)
IT (AV)
500
mA
R.M.S OnState Current
IT (RMS)
800
mA
9 (50Hz)
Peak One Cycle Surge OnState
Current (NonRepetitive)
ITSM
10 (60Hz)
A
I
2
t Limit Value
I
2
t
0.4
A
2
s
Critical Rate of Rise of On-State
Current
(Note 1)
di / dt
10
A / s
Peak Gate Power Dissipation
PGM
0.1
W
Average Gate Power Dissipation
PG(AV)
0.01
W
Peak Forward Gate Voltage
VFGM
3.5
V
Peak Reverse Gate Voltage
VRGM
5
V
Peak Forward Gate Current
IGM
125
mA
Junction Temperature
Tj
40~125
°C
Storage Temperature Range
Tstg
40~125
°C
Note 1: di / dt Test condition: iG = 5mA, tgw = 10s, tgr≤250ns
MARKING
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
13-5B1A
Weight: 0.2 g (typ.)
P
A
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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