參數(shù)資料
型號(hào)： US112N-6
廠商： UNISONIC TECHNOLOGIES CO LTD
元件分類： 晶閘管
英文描述： 12 A, 600 V, SCR, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 197K
代理商： US112N-6
UTC US112S/N
SCR
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-013,B
UTC US112S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX.
UNIT
Gate trigger Current
IGT
VD = 12 V, RL =140
200
A
Gate trigger Voltage
VGT
VD = 12 V, RL=140
0.8
V
Gate non-trigger voltage
VGD
VD = VDRM, RL = 3.3 k
, RGK = 1k
Tj = 125°C
0.1
V
Reverse gate voltage
VRG
IRG = 10 A
8
V
Holding Current
IH
IT = 50 mA, RGK = 1 k
5
mA
Latching Current
IL
IG = 1 mA ,RGK = 1 k
6
mA
Circuit Rate Of Change Of
off-state Voltage
dV/dt
VD = 67 % VDRM ,RGK = 220
Tj = 125°C
5
V/s
On-state voltage
VTM
ITM = 24A, tp = 380 s, Tj = 25°C
1.6
V
Threshold Voltage
Vt0
Tj = 125°C
0.85
V
Dynamic Resistance
Rd
Tj = 125°C
30
mΩ
Off-state Leakage Current
IDRM
IRRM
VDRM = VRRM, RGK = 220
Tj = 25°C
Tj = 125°C
5
2
A
mA
UTC US112N(STANDARD) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX.
UNIT
Gate trigger Current
IGT
VD = 12 V, RL =33
2
15
mA
Gate trigger Voltage
VGT
VD = 12 V, RL=33
1.3
V
Gate non-trigger voltage
VGD
VD = VDRM, RL = 3.3 k
,Tj = 125°C
0.2
V
Holding Current
IH
IT = 500 mA, Gate open
30
mA
Latching Current
IL
IG = 1.2 IGT
60
mA
Circuit Rate Of Change Of
off-state Voltage
dV/dt
VD = 67 % VDRM , Gate open, Tj = 125°C
200
V/s
On-state voltage
VTM
ITM = 24A, tp = 380 s, Tj = 25°C
1.6
V
Threshold Voltage
Vt0
Tj = 125°C
0.85
V
Dynamic Resistance
Rd
Tj = 125°C
30
mΩ
Off-state Leakage Current
IDRM
IRRM
VDRM = VRRM,
Tj = 25°C
Tj = 125°C
5
2
A
mA
THERMAL RESISTANCES
PARAMETER
SYMBOL
VALUE
UNIT
Junction to case (DC)
Rth(j-c)
1.3
KW
Junction to ambient
Rth(j-a)
60
K/W
相關(guān)PDF資料
PDF描述
US112N-8 12 A, 800 V, SCR, TO-220AB
US112S-4 12 A, 400 V, SCR, TO-220AB
US112S-6 12 A, 600 V, SCR, TO-220AB
US112S-8 12 A, 800 V, SCR, TO-220AB
USF05G49 0.8 A, 400 V, SCR
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