參數(shù)資料
型號(hào)： UPD4616112F9-B85LX-BC2
廠商： NEC Corp.
英文描述： 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
中文描述： 1,600位CMOS移動(dòng)指明內(nèi)存100萬(wàn)字由16位溫度范圍
文件頁(yè)數(shù)： 28/32頁(yè)
文件大?。?/td> 212K
代理商： UPD4616112F9-B85LX-BC2
Data Sheet M15794EJ2V0DS
28
μ
PD4616112-X
Standby Mode 2 entry and recovery Timing Chart
Address (Input)
/CS (Input)
MODE (Input)
t
CM
t
RC
t
CP
200 s
Wait Time
Read Operation 3 times
Normal
Operation
Standby
Mode 2
(Data invalid)
Parameter
Symbol
MIN.
MAX.
Unit
Note
/CS High to MODE Low
t
CM
0
ns
Cautions 1. Make MODE and /CS high level during the wait time.
2. Make MODE high level during the wait time and three read operations.
3. The read operation must satisfy the specs described on page 10 (Read Cycle (B Version)).
4. The read operation address can be either V
IH
or V
IL
.
5. Perform reading by toggling /CS.
6. To prevent bus contention, it is recommended to set /OE to high level.
7. Do not input data to the I/O pins if /OE is low level during a read operation.
相關(guān)PDF資料
PDF描述
UPD4616112F9-BC80-BC2 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
UPD4616112 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
UPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD4616112F9-BC90-BC2 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
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