參數資料
型號： UPD4616112F9-B85LX-BC2
廠商： NEC Corp.
英文描述： 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
中文描述： 1,600位CMOS移動指明內存100萬字由16位溫度范圍
文件頁數： 14/32頁
文件大?。?/td> 212K
代理商： UPD4616112F9-B85LX-BC2
Data Sheet M15794EJ2V0DS
14
μ
PD4616112-X
Read Cycle Timing Chart 4
/CS
(Input)
Address (Input)
/LB, /UB
(Input)
Data out
I/O
(Output)
t
SKEW
t
SKEW
High impedance
High impedance
t
RC1
t
BA
t
BLZ
t
BA
t
RC1
t
RC
/OE
(Input)
t
ACS
t
OE
t
OLZ
t
OE
Data out
t
OLZ
t
BLZ
t
OHZ
t
BHZ
t
OHZ
t
BHZ
Note
Note
Caution If the address is changed using a value that is either lower than the minimum value or higher than
the maximum value for the read cycle time (t
RC
), none of the data can be guaranteed.
Note
To perform a continuous read toggling /OE, /UB, and /LB with /CS low level at an identical address, make
settings so that the sum (t
RC
) of the identical address read cycle times (t
RC1
) is 10
μ
s or less.
Remark
In read cycle, /WE should be fixed to High.
相關PDF資料
PDF描述
UPD4616112F9-BC80-BC2 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
UPD4616112 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
UPD4616112-X 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
UPD4616112F9-BC90-BC2 16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT
UPD4664312-X 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
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