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參數(shù)資料
| 型號(hào)： | UPD46128512-E12X |
| 廠商： | NEC Corp. |
| 英文描述： | 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 128兆位CMOS移動(dòng)指明內(nèi)存800萬(wàn)字由16位溫度范圍 |
| 文件頁(yè)數(shù)： | 23/82頁(yè) |
| 文件大?。?/td> | 817K |
| 代理商： | UPD46128512-E12X |
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Preliminary Data Sheet M17507EJ2V0DS
23
μ
PD46128512-X
Figure 4-8. Burst Read /WAIT Output (/CE1 = LOW, /ADV = HIGH
→
LOW)
T1
T3
T0
T2
T4
T5
CLK (Input)
/ADV (Input)
A0 to A22 (Input)
/CE1 (Input)
/WE (Input)
DQ0 to DQ15 (Output)
/WAIT (Output)
Add
t
ADWA
L
H
RL = 5
High-Z
Q0
t
CLWA
The /WAIT output will be asserted to LOW after specific time duration from the falling edge of the /CE1, or falling edge
of the /ADV when /CE1 held LOW at burst write operation. When the /WAIT output LOW, it indicates the input data can
not be accepted at the next clock cycle. The /WAIT output asserts HIGH one clock cycle before the valid data input. The
/WAIT output retains the same state as of the clock cycle right before being suspended with /WE brought to HIGH.
The /WAIT output always stay high impedance state under asynchronous mode setting.
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| UPD46128512-E9X | 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
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