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參數(shù)資料
| 型號(hào)： | UPD444016LG5-A10-7JF |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
| 中文描述： | 4分位CMOS快速靜態(tài)存儲(chǔ)器256K字由16位 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 102K |
| 代理商： | UPD444016LG5-A10-7JF |
4
μ
PD444016L
Data Sheet M14431EJ3V0DS
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Supply voltage
V
CC
–0.5
Note
to +4.0
V
Input / Output voltage
V
T
–0.5
Note
to +4.0
V
Operating ambient temperature
T
A
0 to 70
°
C
Storage temperature
T
stg
–55 to +125
°
C
Note
–2.0 V (MIN.) (pulse width : 2 ns)
Caution
Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+0.3
V
Low level input voltage
V
IL
–0.3
Note
+0.8
V
Operating ambient temperature
T
A
0
70
°
C
Note
–2.0 V (MIN.) (pulse width : 2 ns)
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| UPD444016LLE-A10 | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
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| UPD444016LLE-A8 | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
| UPD444016L | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
| UPD444016LG5-A12-7JF | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD444016LG5-A12-7JF-A | 制造商:Renesas Electronics 功能描述:12ns 3.3V Cut Tape |
| UPD444016LG5-A8-7JF-A | 制造商:Renesas Electronics 功能描述:8ns 3.3V Cut Tape |
| UPD444016LLE-A12-A | 制造商:Renesas Electronics 功能描述:12ns Cut Tape |
| UPD444C | 制造商:Panasonic Industrial Company 功能描述:IC |
| UPD44644362AF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Single 1.8V 72M-Bit 2M x 36 0.45ns 165-Pin BGA 制造商:Renesas 功能描述:SRAM Chip Sync Single 1.8V 72M-Bit 2M x 36 0.45ns 165-Pin BGA |
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