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參數(shù)資料
| 型號： | UPD444016LLE-A10 |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
| 中文描述： | 4分位CMOS快速靜態(tài)存儲器256K字由16位 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 102K |
| 代理商： | UPD444016LLE-A10 |
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confirm that this is the latest version.
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availability and additional information.
1999
MOS INTEGRATED CIRCUIT
μ
PD444016L
4M-BIT CMOS FAST SRAM
256K-WORD BY 16-BIT
DATA SHEET
Document No. M14431EJ3V0DS00 (3rd edition)
Date Published January 2001 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The
μ
PD444016L is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
±
0.3 V.
The
μ
PD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).
Features
262,144 words by 16 bits organization
Fast access time : 8, 10, 12 ns (MAX.)
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
Output Enable input for easy application
Single +3.3 V power supply
Ordering Information
Part number
Package
Access time
Supply current mA (MAX.)
ns (MAX.)
At operating
At standby
μ
PD444016LLE-A8
44-pin plastic SOJ
8
210
5
μ
PD444016LLE-A10
(10.16 mm (400))
10
190
μ
PD444016LLE-A12
12
180
μ
PD444016LG5-A8-7JF
44-pin plastic TSOP (II)
8
210
μ
PD444016LG5-A10-7JF
(10.16 mm (400))
10
190
μ
PD444016LG5-A12-7JF
(Normal bent)
12
180
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPD444016LLE-A12 | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
| UPD444016LLE-A8 | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
| UPD444016L | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
| UPD444016LG5-A12-7JF | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
| UPD444016LG5-A8-7JF | 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD444016LLE-A12-A | 制造商:Renesas Electronics 功能描述:12ns Cut Tape |
| UPD444C | 制造商:Panasonic Industrial Company 功能描述:IC |
| UPD44644362AF5-E40-FQ1 | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Single 1.8V 72M-Bit 2M x 36 0.45ns 165-Pin BGA 制造商:Renesas 功能描述:SRAM Chip Sync Single 1.8V 72M-Bit 2M x 36 0.45ns 165-Pin BGA |
| UPD44645182AF5-E33-FQ1-A | 制造商:Renesas Electronics Corporation 功能描述:RENUPD44645182AF5-E33-FQ1-A 72MBITS QDRI |
| UPD44646183AF5-E22-FQ1 | 功能描述:SRAM DDRII 72MBIT 165-PBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
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