參數(shù)資料
型號: UPD444016LG5-A8-7JF
廠商: NEC Corp.
英文描述: 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
中文描述: 4分位CMOS快速靜態(tài)存儲器256K字由16位
文件頁數(shù): 1/16頁
文件大小: 102K
代理商: UPD444016LG5-A8-7JF
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1999
MOS INTEGRATED CIRCUIT
μ
PD444016L
4M-BIT CMOS FAST SRAM
256K-WORD BY 16-BIT
DATA SHEET
Document No. M14431EJ3V0DS00 (3rd edition)
Date Published January 2001 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The
μ
PD444016L is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
±
0.3 V.
The
μ
PD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).
Features
262,144 words by 16 bits organization
Fast access time : 8, 10, 12 ns (MAX.)
Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
Output Enable input for easy application
Single +3.3 V power supply
Ordering Information
Part number
Package
Access time
Supply current mA (MAX.)
ns (MAX.)
At operating
At standby
μ
PD444016LLE-A8
44-pin plastic SOJ
8
210
5
μ
PD444016LLE-A10
(10.16 mm (400))
10
190
μ
PD444016LLE-A12
12
180
μ
PD444016LG5-A8-7JF
44-pin plastic TSOP (II)
8
210
μ
PD444016LG5-A10-7JF
(10.16 mm (400))
10
190
μ
PD444016LG5-A12-7JF
(Normal bent)
12
180
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