參數(shù)資料
型號(hào)： UPA859TD
英文描述： Discrete
中文描述： 離散
文件頁數(shù)： 1/35頁
文件大小： 172K
代理商： UPA859TD
DATA SHEET
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representative for availability and additional information.
NPN SILICON RF TWIN TRANSISTOR
μ
PA850TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
Document No. PU10096EJ01V0DS (1st edition)
Date Published February 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002
FEATURES
Low voltage operation
2 different built-in transistors (2SC5435, 2SC5736)
Q1: High gain transistor
f
T
= 12.0 GHz TYP.,
S
21e
Q2: Low phase distortion transistor suited for OSC applications
f
T
= 5.0 GHz TYP.,
S
21e
6-pin lead-less minimold package
2
= 8.5 dB TYP. @ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
2
= 4.5 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
BUILT-IN TRANSISTORS
Q1
Q2
3-pin thin-type ultra super minimold part No.
2SC5435
2SC5736
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
μ
PA850TD
50 pcs (Non reel)
8 mm wide embossed taping
μ
PA850TD-T3
10 kpcs/reel
Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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UPA861TD 功能描述:射頻雙極小信號(hào)晶體管 NPN Silicon RF Twin RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
UPA861TD-A 功能描述:射頻雙極小信號(hào)晶體管 NPN Silicon RF Twin RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
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