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參數(shù)資料
| 型號： | UPA836TF-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE |
| 中文描述： | NPN硅外延晶體管，2個不同的元素，采用6引腳薄型模具迷你小包裝 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 68K |
| 代理商： | UPA836TF-T1 |
3
μ
PA836TF
(2) Q2
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector cutoff current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
μ
A
Emitter cutoff current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
DC current gain
h
FE
V
CE
= 1 V, I
C
= 3 mA
Note 1
100
145
Gain bandwidth product (1)
f
T
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
4.0
4.5
GHz
Gain bandwidth product (2)
f
T
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
9.0
GHz
Feedback capacitance
C
re
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Note 2
0.75
0.85
pF
Insertion power gain (1)
|
S
21e
|
2
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
2.5
3.5
dB
Insertion power gain (2)
|
S
21e
|
2
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
6.5
dB
Noise figure (1)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
1.7
2.5
dB
Noise figure (2)
NF
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
1.5
dB
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
h
FE
CLASSIFICATION
Rank
FB
Marking
V47
h
FE
value of Q1
75 to 150
h
FE
value of Q2
100 to 145
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