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參數(shù)資料
| 型號： | UPA836TF-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE |
| 中文描述： | NPN硅外延晶體管，2個(gè)不同的元素，采用6引腳薄型模具迷你小包裝 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 68K |
| 代理商： | UPA836TF-T1 |
2
μ
PA836TF
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
RATING
Q1
Q2
Collector to base voltage
V
CBO
9
9
V
Collector to emitter voltage
V
CEO
6
6
V
Emitter to base voltage
V
EBO
2
2
V
Collector current
I
C
30
100
mA
Total power dissipation
P
T
150 in 1 element
150 in 1 element
mW
200 in 2 elements
Note
Junction temperature
T
j
150
150
°
C
Storage temperature
T
stg
65 to +150
°
C
Note
110 mW must not be exceeded for 1 element.
(1) Q1
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector cutoff current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
μ
A
Emitter cutoff current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
DC current gain
h
FE
V
CE
= 3 V, I
C
= 10 mA
Note 1
75
150
Gain bandwidth product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
12
GHz
Feedback capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.7
pF
Insertion power gain
|
S
21e
|
2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
7
8.5
dB
Noise figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
1.5
2.5
dB
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty cycle
≤
2%
2.
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
UNIT
SYMBOL
PARAMETER
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