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參數(shù)資料
| 型號(hào)： | UPA829TD |
| 英文描述： | TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
| 中文描述： | 晶體管|晶體管|一對(duì)|叩| 6V的五（巴西）總裁| 100mA的一（c）|的TSOP |
| 文件頁(yè)數(shù)： | 6/16頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | UPA829TD |
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Data Sheet PU10167EJ01V0DS
6
μ
PA828TC
V
CE
= 1 V
f = 4 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
I
2
|
2
M
10
8
4
2
6
01
10
100
MAG
|S
21e
|
2
V
CE
= 1 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
MSG
I
2
|
2
M
M
16
8
4
12
01
10
100
MAG
|S
21e
|
2
V
= 1 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
16
I
2
|
2
M
M
12
8
4
0
1
10
100
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
f = 4 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
I
2
|
2
M
10
8
4
2
6
01
10
100
MAG
|S
21e
|
2
V
CE
= 2 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
MSG
I
2
|
2
M
M
16
8
4
12
01
10
100
MAG
|S
21e
|
2
V
= 2 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
16
I
2
|
2
M
M
12
8
4
0
1
10
100
MAG
MSG
|S
21e
|
2
相關(guān)PDF資料 |
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| UPA829TD-T3 | TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
| UPA836TD | TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
| UPA836TD-T3 | TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA829TD-T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
| UPA829TF | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA831 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| UPA831TC | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA831TC-T1 | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
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