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參數(shù)資料
| 型號： | UPA829TD |
| 英文描述： | TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
| 中文描述： | 晶體管|晶體管|一對|叩| 6V的五（巴西）總裁| 100mA的一（c）|的TSOP |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 78K |
| 代理商： | UPA829TD |
Data Sheet PU10167EJ01V0DS
3
μ
PA828TC
TYPICAL CHARACTERISTICS (T
A
= +25
°
C, unless otherwise specified)
300
250
180
90
200
150
100
50
0
25
50
75
100
125
150
T
t
Ambient Temperature T
A
(C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
×
1.0 mm (t) )
2 Elements in total
1 Element
R
r
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
f = 1 MHz
V
CE
= 1 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
40
35
30
25
10
5
20
15
0
2
1
3
4
C
C
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100 A
I
B
= 50 A
250 A
300 A
350 A
500 A
450 A
400 A
200 A
150 A
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| UPA829TD-T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
| UPA829TF | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA831 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
| UPA831TC | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA831TC-T1 | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
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