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參數(shù)資料
| 型號(hào)： | UPA800T |
| 廠商： | NEC Corp. |
| 英文描述： | HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| 中文描述： | 高頻低噪聲放大器NPN硅外延晶體管，內(nèi)置2個(gè)元素迷你模具 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 51K |
| 代理商： | UPA800T |
PACKAGE DRAWINGS
(Unit: mm)
SILICON TRANSISTOR
μ
PA800T
The
μ
PA800T has built-in 2 low-voltage transistors which are designed
to amplify low noise in the VHF band to the UHF band.
FEATURES
Low Noise
NF = 1.9 dB TYP. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
High Gain
|S
21e
|
2
= 6.5 dB TYP. @ f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
A Mini Mold Package Adopted
Built-in 2 Transistors (2
×
2SC4228)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
μ
PA800T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
μ
PA800T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
35
mA
Total Power Dissipation
P
T
150 in 1 element
200 in 2 elements
Note
mW
J unction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
Note
110 mW must not be exceeded in 1 element.
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
PIN CONFIGURATION (Top View)
1995
PRELIMINARY DATA SHEET
Printed in J apan
Document No. ID-3634
(O.D. No. ID-9141)
Date Published April 1995 P
The information in this document is subject to change without notice.
2.1±0.1
1.25±0.1
1
2
3
6
5
4
0
–
+
0
0
1
2
0
0
0
0
–
+
6
Q
1
5
4
Q
2
1
2
3
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
X
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA800T-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN Silicn AMP Oscilltr Twn Trnst RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA800TF | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA800TF-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| UPA800T-T1 | 功能描述:射頻雙極小信號(hào)晶體管 DISC BY CEL 2/02 SO-6 NPN HI-FREQ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA800T-T1-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN Silicn AMP Oscilltr Twn Trnst RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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