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參數(shù)資料
| 型號： | UPA800TF |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 15K |
| 代理商： | UPA800TF |
UPA800TF
NPN SILICON HIGH
FREQUENCY TRANSISTOR
SMALL PACKAGE STYLE:
SOT-363 package measures just 2.0 mm x 1.25 mm
LOW HEIGHT PROFILE:
Just 0.60 mm high
EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE TS06
(Top View)
DESCRIPTION
The UPA800TF contains two NE680 NPN high frequency
silicon bipolar chips. NEC's new low profile TF package is ideal
for all portable wireless applicatons where reducing compo-
nent height is a prime consideration. Each transistor chip is
independently mounted and easily configured for two stage
cascade LNAs and other similar applications.
PART NUMBER
PACKAGE OUTLINE
UPA800TF
TS06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
1
at V
CE
= 3 V, I
C
= 5 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 5 mA
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
μ
A
μ
A
1.0
1.0
200
80
5.5
120
8.0
0.3
7.5
1.9
GHz
pF
dB
dB
0.7
5.5
3.2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes: 1.Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use
part number UPA800TF-T1, 3K per reel.
PIN OUT
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
California Eastern Laboratories
2.1
±
0.1
1.25
±
0.1
0 ~ 0.1
0.13
±
0.05
0.6
±
0.1
0.45
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
(All Leads)
0.22
+0.10
- 0.05
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
RATINGS
20
10
1.5
35
mW
mW
°
C
°
C
110
200
150
T
J
T
STG
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
2/99
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA800TF-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| UPA800T-T1 | 功能描述:射頻雙極小信號晶體管 DISC BY CEL 2/02 SO-6 NPN HI-FREQ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA800T-T1-A | 功能描述:射頻雙極小信號晶體管 NPN Silicn AMP Oscilltr Twn Trnst RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA801 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA801T | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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