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參數資料
| 型號： | UPA804T-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | SILICON TRANSISTOR |
| 中文描述： | 硅晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 52K |
| 代理商： | UPA804T-T1 |
1995
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
μ
PA804T
The 2SC4571 has built-in 2 transistors which were developed for UHF.
FEATURES
High f
T
f
T
= 5.0 GHz TYP. (@ V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz)
Small Collector Capacitance
C
ob
= 0.9 pF TYP. (@ V
CB
= 5 V, I
E
= 0, f = 1 MHz)
A surface Mounting Package Adopted
Built-in 2 Transistors (2
×
2SC4571)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
μ
PA804T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
μ
PA804T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
60
mA
Total Power Dissipation
P
T
120 in 1 element
160 in 2 elements
Note
mW
J unction Temperature
T
j
125
C
Storage Temperature
T
stg
–55 to 125
C
Note
90 mW must not be exceeded in 1 element.
PIN CONFIGURATION (Top View)
Printed in J apan
Document No. ID-3638
(O.D. No. ID-9145)
Date Published April 1995 P
2.1±0.1
1.25
1
2
3
6
5
4
0
–
+
0
0
1
2
0
0
0
0
–
+
6
Q
1
5
4
Q
2
1
2
3
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
X
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
PACKAGE DRAWINGS
(Unit: mm)
The information in this document is subject to change without notice.
相關PDF資料 |
PDF描述 |
|---|---|
| UPA804 | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA804TC | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA804TC-T1 | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA806 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA806T | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UPA805 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA805T | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA805T-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA806 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA806T | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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