參數(shù)資料
型號： UPA677TB
廠商： NEC Corp.
英文描述： N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述： N溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù)： 1/6頁
文件大?。?/td> 58K
代理商： UPA677TB
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA677TB
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16598EJ1V0DS00 (1st edition)
Date Published March 2003 NS CP(K)
Printed in Japan
2003
DESCRIPTION
The
μ
PA677TB is a switching device which can be driven
directly by a 2.5 V power source.
The
μ
PA677TB features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
R
DS(on)1
= 0.57
MAX. (V
GS
= 4.5 V, I
D
= 0.30 A)
R
DS(on)2
= 0.60
MAX. (V
GS
= 4.0 V, I
D
= 0.30 A)
R
DS(on)3
= 0.88
MAX. (V
GS
= 2.5 V, I
D
= 0.15 A)
Two MOS FET circuits in same size package as SC-70
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA677TB
SC-88 (SSP)
Marking: WA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation(2units)
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
20
±12
±0.35
±1.40
0.2
150
V
V
A
A
W
°C
°C
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 Board of 2500 mm
2
x 1.1 mm 2units total.
55 to +150
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V
ESD
= ±200 V TYP. (C = 200 pF, R = 0
, Single pulse)
PACKAGE DRAWING (Unit: mm)
0.2
+0.1
-
0
0.15
+0.1
-
0.05
2
1
0.65
1.3
0.7
2.0 ±0.2
0.9 ±0.1
0 to 0.1
0.65
6
1
5
2
4
3
PIN CONNECTUON (Top View)
6
5
4
1
2
3
1:
2:
3:
4:
5:
6:
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA677TB-T1-A 功能描述:MOSFET DL N-CH 20V SC-88 6SSP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
UPA677TB-T2-A 功能描述:MOSFET N-CH DUAL 20V SC-70 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
UPA678TB 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA678TB-T1-A 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 0.25A 6-Pin SC-88 T/R 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 20V 0.25A 6PIN SC-88 - Tape and Reel
UPA678TB-T2-A 功能描述:MOSFET P-CH DUAL 20V SC-70 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
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