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參數(shù)資料
| 型號(hào)： | UPA807T |
| 廠商： | NEC Corp. |
| 英文描述： | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
| 中文描述： | 微波低噪聲放大器NPN硅外延晶體管，內(nèi)置2個(gè)元素的超小型模具 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | UPA807T |
SILICON TRANSISTOR
μ
PA807T
FEATURES
Low Current, High Gain
|S
21e
|
2
= 9 dB TYP. @V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 8.5 dB TYP. @V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
A Super Mini Mold Package Adopted
Built-in 2 Transistors (2
×
2SC5179)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
μ
PA807T
Loose products
(50 PCS)
μ
PA807T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an
NEC Sales Representative. (Unit sample quantity is 50
pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
10
mA
Total Power Dissipation
P
T
30 in 1 element
60 in 2 elements
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
–65 to +150
°
C
Document No. P12153EJ2V0DS00 (2nd edition)
(Previous No. ID-3641)
Date Published November 1996 N
Printed in Japan
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
2.1±0.1
1.25±0.1
2
1
0
0
0
+
–
1
2
3
6
5
4
X
0
0
0
0
+
–
PACKAGE DRAWINGS
(Unit: mm)
1995
DATA SHEET
6
5
4
1
2
3
Q
1
Q
2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
PIN CONFIGURATION (Top View)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
Embossed tape 8 mm wide. Pin 6
(Q1 Base), Pin 5 (Q2 Base), Pin 4
(Q2 Emitter) face to perforation
side of the tape.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA807T-T1 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
| UPA809 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
| UPA809TF | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA809TF-T1 | BJT |
| UPA809T | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA807T-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA807TT1 | 制造商:NEC/CEL 功能描述:New |
| UPA807T-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 3V 0.01A 6-Pin SOT-363 T/R |
| UPA807T-T1-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA808 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
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