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參數(shù)資料
| 型號(hào)： | UPA622TT-E2-A |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 149K |
| 代理商： | UPA622TT-E2-A |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA622TT
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G16113EJ2V0DS00 (2nd edition)
Date Published May 2005 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
DESCRIPTION
The
μ
PA622TT is a switching device which can be driven
directly by a 4.0 V power source.
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
4.0 V drive available
Low on-state resistance
R
DS(on)1
= 82 m
MAX. (V
GS
= 10 V, I
D
= 1.5 A)
R
DS(on)2
= 120 m
MAX. (V
GS
= 4.5 V, I
D
= 1.0 A)
R
DS(on)3
= 139 m
MAX. (V
GS
= 4.0 V, I
D
= 1.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA622TT-E1-A
μ
PA622TT-E2-A
6 pin WSOF (1620)
Remark
"-A" indicates Pb-free (This product does not contain Pb
in external electrode and other parts.).
"-E1" or "-E2" indicates the unit orientation.
(8 mm embossed carrier tape, 3000 pcs/reel)
Marking: WC
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Drain Current (pulse)
Note2
Total Power Dissipation
Total Power Dissipation
Note1
Channel Temperature
Storage Temperature
Notes 1.
Mounted on FR-4 board of 5000 mm
2
x 1.1 mm, t
≤
5
sec.
2.
PW
≤
10
μ
s, Duty Cycle
≤
1%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
30
±
20
±
3.0
±
12
0.2
1.3
150
V
V
A
A
W
W
°C
°C
–55 to +150
PACKAGE DRAWING (Unit: mm)
2.0 ±0.2
2
0.65
0.65
0.8 MAX.
0 to 0.05
0
0
+
0
0.2
+0.1
0.05
0
1
S
0.05
M S
0.1
S
1, 2, 5, 6: Drain
3 : Gate
4 : Source
1
2
3
6
5
4
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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| UPA650TT-E1-A | 功能描述:MOSFET P-CH 12V 6-WSOF RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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