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參數(shù)資料
| 型號： | UPA2754GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 74K |
| 代理商： | UPA2754GR |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
μ
PA2754GR
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. G15816EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2001
PACKAGE DRAWING (Unit: mm)
1.27
0.12 M
6.0 ±0.3
4.4
0.40
+0.10
0.78 MAX.
0
1
1
0.8
0.5 ±0.2
0
+
–
5.37 MAX.
0.10
1
4
8
5
1 : Source 1
2 : Gate 1
7, 8: Drain 1
3 : Source 2
4 : Gate 2
5, 6: Drain 2
EQUIVALENT CIRCUIT
(1/2 circuit)
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
The
μ
PA2754GR is Dual N-channel MOS Field Effect
Transistor designed for Li-ion battery protection circuit
and power management application.
FEATURES
Dual chip type
Low on-state resistance
R
DS(on)1
= 14.5 m
MAX. (V
GS
= 4.5 V, I
D
= 5.5 A)
R
DS(on)2
= 15.0 m
MAX. (V
GS
= 4.0 V, I
D
= 5.5 A)
R
DS(on)4
= 18.6 m
MAX. (V
GS
= 2.5 V, I
D
= 5.5 A)
Low C
iss
: C
iss
= 1940 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA2754GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note2
Drain Current (pulse)
Note1
Total Power Dissipation (2 units)
Note2
Total Power Dissipation (1 unit)
Note2
V
GSS
±12
V
I
D(DC)
±11
A
I
D(pulse)
±88
A
P
T
2.0
W
P
T
1.7
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
55 to +150
°C
I
AS
11
A
E
AS
12.1
mJ
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1%
2.
T
A
= 25°C, Mounted on ceramic substrate of 2000 mm
2
x 2.2 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
, V
GS
= 12
→
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| UPA2754GR-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2754GR-E1-A | 制造商:Renesas Electronics 功能描述:Nch 30V 11A 14.5m@4.5V 8SOP Cut Tape |
| UPA2755AGR-E1-AT | 功能描述:MOSFET DL N-CH 30V 8A 8SOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| UPA2755AGR-E2-AT | 功能描述:MOSFET N-CH DUAL 30V 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| UPA2755GR | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
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