- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379488 > UPA2502 (NEC Corp.) N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PDF資料下載
參數(shù)資料
| 型號： | UPA2502 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 148K |
| 代理商： | UPA2502 |
Data Sheet G16681EJ1V0DS
2
μ
PA2502
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30.0 V, V
GS
= 0 V
1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±20.0 V, V
DS
= 0 V
±10.0
μ
A
Gate Cut-off Voltage
Forward Transfer Admittance
Note
V
GS(off)
V
DS
= 10.0 V, I
D
= 1.0 mA
1.50
2.50
V
| y
fs
|
V
DS
= 10.0 V, I
D
= 7.0 A
5
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10.0 V, I
D
= 7.0 A
9.3
12.0
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 7.0 A
13.1
18.0
m
Input Capacitance
C
iss
V
DS
= 10.0 V
760
pF
Output Capacitance
C
oss
V
GS
= 0 V
300
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
100
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15.0 V, I
D
= 7.0 A
14
ns
Rise Time
t
r
V
GS
= 10.0 V
3
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
32
ns
Fall Time
t
f
4
ns
Total Gate Charge
Q
G
V
DD
= 15.0 V
8.5
nC
Gate to Source Charge
Q
GS
V
GS
= 5.0 V
2.8
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
= 13.0 A
3.5
nC
V
F(S-D)
I
F
= 13.0 A, V
GS
= 0 V
0.84
V
Reverse Recovery Time
t
rr
I
F
= 13.0 A, V
GS
= 0 V
27
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
24
nC
Note
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
s
Duty Cycle
≤
1%
τ
V
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
μ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA2503 | HN M2.5 X 0.45 SS (5MM X 2MM) |
| UPA2503TM | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2754GR | SWITCHING N-CHANNEL POWER MOSFET |
| UPA677TB | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA807 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA2502TM | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2503 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2503TM | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2510 | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2510TM | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。