參數(shù)資料
型號(hào): UPA1890
廠商: NEC Corp.
英文描述: N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: N和P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān)
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 95K
代理商: UPA1890
Data Sheet G14762EJ1V0DS00
3
μ
PA1890
B) P-Channel
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= –30 V, V
GS
= 0
V
–10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
#
16 V, V
DS
= 0
V
#
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= –10
V, I
D
= –1 mA
–1.3
–1.8
–2.3
V
Forward Transfer Admittance
| y
fs
|
V
DS
= –10
V, I
D
= –2.5
A
3
7.8
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= –10
V, I
D
= –2.5
A
28
37
m
R
DS(on)2
V
GS
= –4.5
V, I
D
= –2.5
A
42
56
m
R
DS(on)3
V
GS
= –4.0
V, I
D
= –2.5
A
47
64
m
Input Capacitance
C
iss
V
DS
= –10
V
851
pF
Output Capacitance
C
oss
V
GS
= 0
V
279
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
128
pF
Turn-on Delay Time
t
d(on)
V
DD
= –15
V
17
ns
Rise Time
t
r
I
D
= –2.5
A
52
ns
Turn-off Delay Time
t
d(off)
V
GS(on)
= –10
V
84
ns
Fall Time
t
f
R
G
= 10
73
ns
Total Gate Charge
Q
G
V
DD
= –24
V
15
nC
Gate to Source Charge
Q
GS
I
D
= –5.0
A
1.9
nC
Gate to Drain Charge
Q
GD
V
GS
= –10
V
4.2
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 5.0
A, V
GS
= 0
V
0.83
V
Reverse Recovery Time
t
rr
I
F
= 5.0
A, V
GS
= 0
V
38
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A
/
μ
s
35
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
(
)
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
1 %
V
GS
Wave Form
I
D
Wave Form
V
GS
(
)
10 %
90 %
V
GS
(on)
10 %
0
I
D
(
)
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
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