參數(shù)資料
型號(hào): UPA103G-E1
廠商: NEC Corp.
英文描述: HIGH FREQUENCY NPN TRANSISTOR ARRAY
中文描述: 高頻NPN晶體管陣列
文件頁數(shù): 3/8頁
文件大?。?/td> 73K
代理商: UPA103G-E1
μ
PA103
3
Data Sheet P10708EJ2V0DS00
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified T
A
= +25 C
μ
PA103B,
μ
PA103G common)
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN.
TYP.
MAX.
I
CBO
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0 (Q1 to Q5)
μ
A
1.0
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0 (Q1 to Q5)
μ
A
1.0
h
FE
Direct Current Amplification at V
CE
= 3 V, I
C
= 5 mA (Q1 to Q5)
40
100
250
h
FE1
/h
FE2
Direct Current Amplification Ratio at V
CE
= 3 V, I
C
= 5 mA, (Q1, Q2)
0.9
1.0
1.1
V
BE
Emitter to Base Voltage at V
CE
= 3 V, I
C
= 5 mA (Q1, Q2)
V
0.8
1.0
V
BE
Emitter to Base Voltage Difference, V
CE
= 3 V, I
C
= 5 mA |Q1 - Q2|
mV
8.0
20
C
CB
Collector to Base Capacitance at V
CB
= 3 V, f = 1 MHz (Q1 to Q5)
pF
0.9
1.8
C
EB
Emitter to Base Capacitance at V
EB
= 0, f = 1 MHz (Q1 to Q4)
pF
1.4
2.8
C
CS
Collector/Substrate Capacitance at V
CS
= 3 V, f = 1 MHz (Q1 to Q4)
pF
1.4
2.8
f
T
Gain Bandwidth Product
*
at V
CE
= 3 V, I
C
= 10 mA
GHz
9.0
*
Measured by installing a single transistor in a Micro-X package: the value shown is a reference value.
CONNECTION DIAGRAM
(Top View)
μ
PA103B
14
13
12
11
10
9
8
1
2
3
4
5
6
7
Q
1
SUB
Q
5
Q
3
Q
2
Q
4
μ
PA103G
Q
1
SUB
Q
5
Q
2
14
13
12
11
10
9
8
1
2
3
4
5
6
7
Q
4
Q
3
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