參數(shù)資料
型號: UPA103G-E1
廠商: NEC Corp.
英文描述: HIGH FREQUENCY NPN TRANSISTOR ARRAY
中文描述: 高頻NPN晶體管陣列
文件頁數(shù): 1/8頁
文件大?。?/td> 73K
代理商: UPA103G-E1
1995, 1999
DATA SHEET
COMPOUND TRANSISTOR
μ
PA103
FEATURES
FIVE MONOLITHIC 9 GHz f
T
TRANSISTORS:
Two of these use a common emitter pin and can be used as differential amplifiers
OUTSTANDING h
FE
LINEARITY
TWO PACKAGE OPTIONS:
μ
PA103B:
Superior thermal dissipation due to studded ceramic package
μ
PA103G:
Reduced circuit size due to 14-pin plastic SOP package for surface mounting
DESCRIPTION AND APPLICATIONS
The
μ
PA103 is a user configurable Silicon bipolar transistor array consisting of a common emitter pair and three
individual bipolar transistors. It is available in a surface mount 14-pin plastic SOP package and a 14-pin ceramic package.
Typical applications include: differential amplifiers and oscillators, high speed comparators, advanced cellular phone
systems, electro-optic and other signal processing up to 1.5 gigabits/second.
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA103B-E1
14-pin ceramic package
μ
PA103G-E1
14-pin plastic SOP (225 mil)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
*
Collector to Base Voltage
V
15
V
CEO
*
Collector to Emitter Voltage
V
6
V
EBO
*
Emitter to Base Voltage
V
2.5
I
C
*
Collector Current
mA
40
P
T
Power Dissipation
μ
PA103B
μ
PA103G
mW
mW
650
350
T
J
Junction Temperature
μ
PA103B
μ
PA103G
°
C
°
C
200
125
T
STG
Storage Temperature
μ
PA103B
μ
PA103G
°
C
°
C
–55 to +200
–55 to +125
*
Absolute maximum ratings for each transistor.
HIGH FREQUENCY NPN TRANSISTOR ARRAY
Caution electro-static sensitive devices
Document No. P10708EJ2V0DS00 (2nd edition)
Date Published October 1999 N CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
The mark
shows major revised points.
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