- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄300053 > UNR9110J(UN9110J) Composite Device - Transistors with built-in Resistor PDF資料下載
參數(shù)資料
| 型號： | UNR9110J(UN9110J) |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 11/18頁 |
| 文件大?。?/td> | 316K |
| 代理商： | UNR9110J(UN9110J) |
UNR91XXJ Series
2
SJH00038AED
I Electrical Characteristics T
a
= 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB
= 50 V, I
E
= 0
0.1
A
ICEO
VCE
= 50 V, I
B
= 0
0.5
Emitter
UNR9111J
IEBO
VEB = 6 V, IC = 0
0.5
mA
cutoff
UNR9112J/9114J/911DJ/
0.2
current
911EJ/911MJ/911NJ/911TJ
UNR9113J/911AJ
0.1
UNR9115J/9116J/9117J/
0.01
9110J/911BJ
UNR911FJ/911HJ
1.0
UNR9119J
1.5
UNR9118J/911LJ/911CJ/911VJ
2.0
Collector to base voltage
VCBO
IC
= 10 A, I
E
= 0
50
V
Collector to emitter voltage
VCEO
IC = 2 mA, IB = 0
50
V
Forward UNR9111J
hFE
VCE
= 10 V, I
C
= 5 mA
35
current
UNR9112J/911EJ
60
transfer
UNR9113J/9114J/911AJ/
80
ratio
911CJ/911MJ
UNR9115J/9116J/9117J/
160
460
9110J/911BJ
UNR9118J/911LJ
20
UNR9119J/911DJ/911FJ/911HJ
30
UNR911NJ/911TJ
80
400
UNR911VJ
6
20
Collector to emitter saturation voltage
VCE(sat)
IC
= 10 mA, I
B
= 0.3 mA
0.25
V
High-level output voltage
VOH
VCC
= 5 V, V
B
= 0.5 V, R
L
= 1 k4.9
V
Low-level output voltage
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 k 0.2
V
UNR9113J/911BJ
VCC
= 5 V, V
B
= 3.5 V, R
L
= 1 k
UNR911DJ
VCC
= 5 V, V
B
= 10 V, R
L
= 1 k
UNR911EJ
VCC = 5 V, VB = 6 V, RL = 1 k
UNR911AJ
VCC
= 5 V, V
B
= 5 V, R
L
= 1 k
Transition frequency
fT
VCB
= 10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Input
UNR9118J
R1
30%
0.51
+30%
k
resis-
UNR9119J
1
tance
UNR911HJ/911MJ/911VJ
2.2
UNR9116J/911FJ/911LJ/911NJ
4.7
UNR9111J/9114J/9115J
10
UNR9112J/9117J/911TJ
22
UNR9110J/9113J/911DJ/911EJ
47
UNR911AJ/911BJ
100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR9110Q | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| UNR9114J(UN9114J) | Composite Device - Transistors with built-in Resistor |
| UNR9115J(UN9115J) | Composite Device - Transistors with built-in Resistor |
| UNR9115Q | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| UNR9115R | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR9110Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| UNR9110R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| UNR9110S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| UNR9111 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| UNR9111G0L | 功能描述:TRANS PNP W/RES 35 HFE SSMINI 3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。