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參數(shù)資料
| 型號： | UNR9110J(UN9110J) |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 1/18頁 |
| 文件大小： | 316K |
| 代理商： | UNR9110J(UN9110J) |
Transistors with built-in Resistor
1
Publication date: July 2001
SJH00038AED
UNR91XXJ Series (UN91XXJ Series)
Silicon PNP epitaxial planer type
For digital circuit
I Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
SS-mini type package, allowing automatic insertion through tape
packing.
I Resistance by Part Number
Marking symbol (R1)(R2)
UNR9110J (UN9110J)
6L
47 k
UNR9111J (UN9111J)
6A
10 k
10 k
UNR9112J (UN9112J)
6B
22 k
22 k
UNR9113J (UN9113J)
6C
47 k
47 k
UNR9114J (UN9114J)
6D
10 k
47 k
UNR9115J (UN9115J)
6E
10 k
UNR9116J (UN9116J)
6F
4.7 k
UNR9117J (UN9117J)
6H
22 k
UNR9118J (UN9118J)
6I
0.51 k
5.1 k
UNR9119J (UN9119J)
6K
1 k
10 k
UNR911AJ
6X
100 k
100 k
UNR911BJ
6Y
100 k
UNR911CJ
6Z
47 k
UNR911DJ (UN911DJ) 6M
47 k
10 k
UNR911EJ (UN911EJ)
6N
47 k
22 k
UNR911FJ (UN911FJ)
6O
4.7 k
10 k
UNR911HJ (UN911HJ) 6P
2.2 k
10 k
UNR911LJ (UN911LJ)
6Q
4.7 k
4.7 k
UNR911MJ
EI
2.2 k
47 k
UNR911NJ
EW
4.7 k
47 k
UNR911TJ (UN911TJ)
EY
22 k
47 k
UNR911VJ
FC
2.2 k
2.2 k
I Absolute Maximum Ratings T
a
= 25°C
Note) The part number in the parenthesis shows conventional part number.
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
0.27±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0
to
0.02
0.10
max.
0.70
+0.05 –0.03
(0.375)
5°
5
°
1.60
+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05 –0.03
B
R1
R2
C
E
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR9110Q | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| UNR9114J(UN9114J) | Composite Device - Transistors with built-in Resistor |
| UNR9115J(UN9115J) | Composite Device - Transistors with built-in Resistor |
| UNR9115Q | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| UNR9115R | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR9110Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| UNR9110R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| UNR9110S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| UNR9111 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
| UNR9111G0L | 功能描述:TRANS PNP W/RES 35 HFE SSMINI 3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
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