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參數(shù)資料
| 型號： | UNR7231(UN7231) |
| 英文描述： | UNR7231 (UN7231) - NPN Transistor with built-in Resistor |
| 中文描述： | UNR7231（UN7231） - npn型內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 60K |
| 代理商： | UNR7231(UN7231) |
1
Transistors with built-in Resistor
* Printed circuit board: Copper foil area of 1cm2 or more and thickness of
1.7mm for the collector portion.
*Pulse measurement
UNR7231 (UN7231)
Silicon NPN epitaxial planer transistor
For amplification of the low frequency
I Features
G High forward current transfer ratio hFE.
G Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
I Absolute Maximum Ratings (Ta=25C)
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC–62
Mini-Power Type Package
Unit: mm
Marking Symbol:
IC
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage
VCEO
20
V
Collector current
IC
0.7
A
Peak collector current
ICP
1.5
A
Total power dissipation
PT*
1.0
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
–55 to +150
C
I Electrical Characteristics (Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 15V, IE = 0
1
A
ICEO
VCE = 15V, IB = 0
10
A
Emitter cutoff current
IEBO
VEB = 14V, IC = 0
0.5
mA
Collector to base voltage
VCBO
IC = 10
A, I
E = 0
20
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
20
V
Forward current transfer ratio
hFE
VCE = 10V, IC = 150mA*
800
2100
Collector to emitter saturation voltage
VCE(sat)
IC = 500mA, IB = 5mA*
0.4
V
Transition frequency
fT
VCB = 20V, IE = –20mA, f = 200MHz
55
MHz
Input resistance
R1
0.7
1
1.3
k
Resistance ratio
R1/R2
0.016
0.021
0.025
4.5
±0.1
2.6
±
0.1
2.5
±
0.1
0.4max.
1.0
+0.1
–0.2
4.0
+0.25
–0.20
3.0
±0.15
1.5
±0.1
0.4
±0.08
0.5
±0.08
1.5
±0.1
0.4
±0.04
1.6
±0.2
45
°
marking
321
B
C
R1(1k
)
R2
(47k
)
E
Note.) The Part number in the Parenthesis shows conventional part number.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| UNR9110 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UNR9110G0L | 功能描述:TRANS PNP W/RES 160HFE SSMINI RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
| UNR9110J | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR9110J(UN9110J) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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