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參數(shù)資料
| 型號： | UNR8231(UN8231) |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 78K |
| 代理商： | UNR8231(UN8231) |
1
Transistors with built-in Resistor
UNR8231/UNR8231A (UN8231/UN8231A)
Silicon NPN epitaxial planer transistor
For switching
I Features
G High forward current transfer ratio hFE.
G Resistor built-in type, allowing downsizing of the equipment and
reduction of the number of parts.
G Available in a type with radial taping.
I Absolute Maximum Ratings (Ta=25C)
1 : Emitter
2 : Collector
3 : Base
MT-2-A1 Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
UNR8231
VCBO
20
V
UNR8231A
60
UNR8231
VCEO
20
V
UNR8231A
50
Peak collector current
ICP
1.5
A
Collector current
IC
0.7
A
Total power dissipation
PT*1
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
–55 to +150
C
B
C
R1(1k
)
R2
(47k
)
E
Collector to
base voltage
Collector to
emitter voltage
I Electrical Characteristics (Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 15V, IE = 0
1
A
Collector cutoff current
ICEO
VCE = 15V, IB = 0
10
A
Emitter cutoff current
IEBO
VEB = 14V, IC = 0
0.5
mA
Collector to base voltage
UNR8231
VCBO
IC = 10
A, I
E = 0
20
V
UNR8231A
60
Collector to emitter voltage
UNR8231
VCEO
IC = 1mA, IB = 0
20
V
UNR8231A
50
Forward current transfer ratio
hFE*VCE = 10V, IC = 150mA
800
2100
Collector to emitter saturation voltage
VCE(sat)*IC = 500mA, IB = 5mA
0.4
V
Input resistance
R1
0.7
1
1.3
k
Resistance ratio
R1/R2
0.016
0.021
0.025
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
200
MHz
* Printed circuit board: Copper foil area of 1cm2 or more and thickness of
1.7mm for the collector portion.
*Pulse measurement
6.9±0.1
2.5±0.1
0.45
1.05±0.05
2.5±0.5
123
2.5±0.5
+0.10
–0.05
0.45
+0.10
–0.05
(0.8)
(0.5)
(1.0)
4.5
±0.1
14.5
±0.5
4.0
0.7
0.65 max.
(0.2)
Note) The Part numbers in the Parenthesis show conventional part number.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR9110 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UNR9110G0L | 功能描述:TRANS PNP W/RES 160HFE SSMINI RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
| UNR9110J | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR9110J(UN9110J) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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