參數(shù)資料
型號(hào): UNR421E
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復(fù)合裝置-內(nèi)置晶體管,電阻,
文件頁(yè)數(shù): 7/14頁(yè)
文件大?。?/td> 540K
代理商: UNR421E
7
Transistors with built-in Resistor
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
Characteristics charts of UNR4217
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25
C
1
0.4
3
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=5V
Ta=25
C
0.01
0.03
0.1
0.3
Output current I
O
(mA)
0.1
0.3
1
3
10
30
100
1
3
10
30
100
I
I
V
O
=0.2V
Ta=25
C
0
12
2
10
4
8
6
0
120
100
80
60
40
20
Collector to emitter voltage V
CE
(V)
C
C
Ta=25
C
I
B
=1.0.9mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.80.70.6mA
0.01
0.03
0.1
0.3
Collector current I
C
(mA)
0.1
0.3
1
3
10
30
100
1
3
10
30
100
C
C
I
C
/I
B
=10
Ta=75
C
25
C
25
C
0
1
3
100
200
300
400
350
250
150
50
10
30
100
300
1000
F
F
Collector current I
C
(mA)
V
CE
=10V
Ta=75
C
25
C
25
C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25
C
1
0.4
3
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=5V
Ta=25
C
0.01
0.03
0.1
0.3
Output current I
O
(mA)
0.1
0.3
1
3
10
30
100
1
3
10
30
100
I
I
V
O
=0.2V
Ta=25
C
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
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PDF描述
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UNR421F(UN421F) 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Composite Device - Transistors with built-in Resistor