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參數(shù)資料
| 型號： | UNR421E |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 復(fù)合裝置-內(nèi)置晶體管，電阻， |
| 文件頁數(shù)： | 12/14頁 |
| 文件大小： | 540K |
| 代理商： | UNR421E |
12
Transistors with built-in Resistor
Characteristics charts of UNR421K
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
V
IN
— I
O
Characteristics charts of UNR421L
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
0
12
2
10
4
8
6
0
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
C
C
Ta=25
C
I
B
=1.2mA
1.0mA
0.2mA
0.4mA
0.6mA
0.8mA
0.01
1
3
0.1
1
10
100
10
30
100
300
1000
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75
C
25
C
–
25
C
0
1
3
240
200
160
120
80
40
10
30
100
300
1000
F
F
Collector current I
C
(mA)
V
CE
=10V
Ta=75
C
25
C
–
25
C
0
1
6
5
4
3
2
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25
C
0.01
0.1
0.3
Output current I
O
(mA)
0.1
1
10
0.03
0.3
3
30
100
1
3
10
30
100
I
I
V
O
=0.2V
Ta=25
C
0
12
2
10
4
8
6
0
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
C
C
Ta=25
C
I
B
=1.0mA
0.8mA
0.2mA
0.4mA
0.6mA
0.01
1
3
0.1
1
10
100
10
30
100
300
1000
Collector current I
C
(mA)
C
C
I
C
/I
B
=10
Ta=75
C
25
C
–
25
C
0
1
3
240
200
160
120
80
40
10
30
100
300
1000
F
F
Collector current I
C
(mA)
V
CE
=10V
Ta=75
C
25
C
–
25
C
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UN421E | Composite Device - Transistors with built-in Resistor |
| UNR421F | Composite Device - Transistors with built-in Resistor |
| UN421F | Composite Device - Transistors with built-in Resistor |
| UNR421K | Composite Device - Transistors with built-in Resistor |
| UN421K | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR421E(UN421E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR421F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR421F(UN421F) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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