參數(shù)資料
型號(hào): UNR421E
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復(fù)合裝置-內(nèi)置晶體管,電阻,
文件頁(yè)數(shù): 13/14頁(yè)
文件大?。?/td> 540K
代理商: UNR421E
13
Transistors with built-in Resistor
C
ob
— V
CB
I
O
— V
IN
0
1
6
5
4
3
2
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25
C
UNR4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
0.01
0.1
0.3
Output current I
O
(mA)
0.1
1
10
100
1
3
10
30
100
I
I
V
O
=0.2V
Ta=25
C
相關(guān)PDF資料
PDF描述
UN421E Composite Device - Transistors with built-in Resistor
UNR421F Composite Device - Transistors with built-in Resistor
UN421F Composite Device - Transistors with built-in Resistor
UNR421K Composite Device - Transistors with built-in Resistor
UN421K Composite Device - Transistors with built-in Resistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UNR421E(UN421E) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス - 抵抗內(nèi)蔵型トランジスタ
UNR421F 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
UNR421F(UN421F) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor