參數(shù)資料
型號(hào): UNR2227(UN2227)
英文描述: 複合デバイス - 抵抗內(nèi)蔵型トランジスタ
中文描述: 複合デバイス-抵抗內(nèi)蔵型トランジスタ
文件頁(yè)數(shù): 10/17頁(yè)
文件大小: 280K
代理商: UNR2227(UN2227)
UNR22XX Series
10
SJH00010BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
1
3
0.4
10
30
100
300
1
000
3
000
10
000
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=
5 V
T
a
=
25
°
C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
0
Collector to emitter voltage V
CE
(V)
12
2
10
4
8
6
0
30
25
20
15
10
5
C
C
T
a
=
25
°
C
I
B
=
1.0 mA
0.1 mA
0.2 mA
0.50.4 0.3 mA
0.0.7 mA
0.8 mA
0.9 mA
0.01
0.03
0.1
0.3
Collector current I
C
(mA)
0.1
0.3
1
3
10
30
100
1
3
10
30
100
C
C
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
3
Collector current I
C
(mA)
40
80
120
160
10
30
100
300
1
000
F
F
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
C
o
Collector to base voltage V
CB
(V)
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
1
3
1.5
10
30
100
300
1
000
3
000
10
000
4.0
3.5
3.0
2.5
2.0
Input voltage V
IN
(V)
O
O
μ
A
V
O
=
5 V
T
a
=
25
°
C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
Characteristics charts of UNR221D
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