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參數(shù)資料
| 型號(hào)： | UNR2227(UN2227) |
| 英文描述： | 複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| 中文描述： | 複合デバイス-抵抗內(nèi)蔵型トランジスタ |
| 文件頁(yè)數(shù)： | 1/17頁(yè) |
| 文件大?。?/td> | 280K |
| 代理商： | UNR2227(UN2227) |
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Transistors with built-in Resistor
UNR22XX Series
(UN22XX Series)
Silicon NPN epitaxial planer transistor
1
Publication date: January 2002
SJH00010BED
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
I
C
P
T
50
V
Collector current
100
mA
Total power dissipation
200
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
For digital circuits
I
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
I
Resistance by Part Number
Marking Symbol (R
1
)
(UN2210)
8L
(UN2211)
8A
(UN2212)
8B
(UN2213)
8C
(UN2214)
8D
(UN2215)
8E
(UN2216)
8F
(UN2117)
8H
(UN2218)
8I
(UN2219)
8K
UNR221D (UN221D)
UNR221E (UN221E)
UNR221F (UN221F)
UNR221K (UN221K)
UNR221L (UN221L)
UNR221M (UN221M)
UNR221N (UN221N)
UNR221T (UN221T)
UNR221V (UN221V)
UNR221Z (UN221Z)
I
Absolute Maximum Ratings
T
a
=
25
°
C
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
4.7 k
4.7 k
47 k
47 k
47 k
2.2 k
22 k
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
10 k
4.7 k
2.2 k
4.7 k
22 k
2.2 k
4.7 k
8M
8N
8O
8P
8Q
EL
EX
EZ
FD
FF
B
R
1
R
2
C
E
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Unit: mm
Internal Connection
Note) The part numbers in the parenthesis show conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR221N(UN221N) | Composite Device - Transistors with built-in Resistor |
| UNR221M(UN221M) | Composite Device - Transistors with built-in Resistor |
| UNR221L(UN221L) | Composite Device - Transistors with built-in Resistor |
| UNR221K(UN221K) | Composite Device - Transistors with built-in Resistor |
| UNR221F(UN221F) | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR222X | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR252D5 | 制造商:Datel 功能描述: |
| UNR2-T220 | 制造商:RIEDON 制造商全稱(chēng):Riedon Powertron 功能描述:Precision Foil Resistors |
| UNR2-T220B | 制造商:RIEDON 制造商全稱(chēng):Riedon Powertron 功能描述:Precision Foil Resistors |
| UNR2-T220B57KOHMS | 制造商:RIEDON 制造商全稱(chēng):Riedon Powertron 功能描述:Precision Foil Resistors |
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