- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381004 > UMT(275)850 (CLARE INC) HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS PDF資料下載
參數(shù)資料
| 型號： | UMT(275)850 |
| 廠商： | CLARE INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS |
| 中文描述： | UNIDIRECTIONAL, SILICON, TVS DIODE |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 29K |
| 代理商： | UMT(275)850 |
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS
549
DESCRIPTION
www.cpclare.com
PMT/UMT (275) Series
STANDARD VOLTAGES
APPLICATIONS
FEATURES
CP Clare’s PMT(275) and UMT(275) Series surge protectors (350-500V and 550-2500V respectively) provide a
high level of protection from high-speed, high-current transient surges. These devices are constructed using a
proprietary semiconductor junction process which results in nanosecond response times combined with peak
current ratings in excess of 20kA.
I
Fast impulse breakdown (
≤
125% of typical DC
breakdown at 5kV/
μ
s)
I
Tight DC breakdown voltage tolerance (
±
10%)
I
Low capacitance
I
Test equipment
I
Video displays
I
Medical electronics
I
Instrumentation circuits
Series
DC Breakdown
Unit
Voltage (typ)
PMT(275)
350
400
450
500
V
V
V
V
UMT(275)
550
600
650
750
800
850
1.0
1.5
2.0
2.5
V
V
V
V
V
V
kV
kV
kV
kV
(See detailed specifications for more information.)
相關PDF資料 |
PDF描述 |
|---|---|
| UPA504T | BJT |
| UPA80 | UPA80C Data Sheet | Data Sheet[02/1982] |
| UPA801T-T1 | BJT |
| UPA802TC | Discrete |
| UPA804T | TRANSISTOR | BJT | PAIR | NPN | 12V V(BR)CEO | 60MA I(C) | SO |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UMT2907A | 制造商:ROHM Semiconductor 功能描述:SWITCHING PNP SMD (Surface Mount) Transistor UMT3 0.2W 制造商:ROHM Semiconductor 功能描述:SWITCHING PNP SMD (Surface Mount) Transistor UMT3 0.2W - free partial T/R at 500. 制造商:ROHM Semiconductor 功能描述:600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| UMT2907A_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:PNP Medium Power Transistor |
| UMT2907AT106 | 功能描述:兩極晶體管 - BJT PNP 60V 0.6A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| UMT2N | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose (dual transistors) |
| UMT2NTR | 功能描述:兩極晶體管 - BJT DUAL PNP 50V 150MA SOT-363 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。