參數資料
型號： UMT(275)750
廠商： CLARE INC
元件分類： 參考電壓二極管
英文描述： HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS
中文描述： UNIDIRECTIONAL, SILICON, TVS DIODE
文件頁數： 3/3頁
文件大?。?/td> 29K
代理商： UMT(275)750
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS
SPECIFICATIONS
551
www.cpclare.com
All characteristics at 25C
UMT(275)1.0
MIN
TYP
UMT(275)1.5
MIN
TYP
PARAMETER
CONDITIONS
SYMBOL
MAX
MAX
UNITS
Device Specifications
DC Breakdown
Impulse Breakdown
Insulation Resistance
Capacitance
Life Ratings
Surge Life
100V/s
5kV/
μ
s
100V
1MHz
V
BD
V
bd
IR
C
0.9
-
10
10
-
1.0
-
-
-
1.1
1.25
-
4
1.35
-
10
10
-
1.50
-
-
-
1.65
1.88
-
4
kV
kV
pF
1kA (PW=20
μ
s)
-
500
-
-
500
-
-
surges
UMT(275)2.0
MIN
TYP
UMT(275)2.5
MIN
TYP
PARAMETER
CONDITIONS
SYMBOL
MAX
MAX
UNITS
Device Specifications
DC Breakdown
Impulse Breakdown
Insulation Resistance
Capacitance
Life Ratings
Surge Life
100V/s
5kV/
μ
s
100V
1MHz
V
BD
V
bd
IR
C
1.8
-
10
10
-
2.0
-
-
-
2.2
2.5
-
4
2.25
-
10
10
-
2.50
-
-
-
2.75
3.13
-
4
kV
kV
pF
1kA (PW=20
μ
s)
-
500
-
-
500
-
-
surges
PMT/UMT (275) Series
MECHANICAL DIMENSIONS
ORDERING INFORMATION
DIMENSIONS
mm
(inches)
(0.315
±
0. 0.005)
(0.076
±
0. 0.005)
±
(19.05
±
0.76
(0.197
±
0. 0.030)
±
(04.75
±
0.76
Devices in the PMT/UMT(275) series with other breakdown voltages
in the 350-2500V range are available upon request.
A complete part number is represented by the digits below. Break-
down voltages are expressed in Volts for devices <1000V and kV for
devices
≥
1kV. For example, PMT(275)350 is a 350V PMT(275) series
device, and UMT(275)2.0 is a 2kV UMT(275) series device.
PMT(275) XXX
UMT(275) XXX
UMT(275) X.X
for 350-500 V
for 550-850 V
for 1.0-2.5 kV
Series
PMT(275)
UMT(275)
Breakdown Voltage
See specification tables
相關PDF資料
PDF描述
UMT(275)800 HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS
UMT(275)850 HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS
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UPA80 UPA80C Data Sheet | Data Sheet[02/1982]
UPA801T-T1 BJT
相關代理商/技術參數
參數描述
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UMT275850 制造商:CLARE 制造商全稱:Clare, Inc. 功能描述:HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS
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UMT2907AT106 功能描述:兩極晶體管 - BJT PNP 60V 0.6A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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