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參數(shù)資料
| 型號： | U20GL2C53A |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type |
| 中文描述： | 東芝高效率二極管堆棧（華大）硅外延式 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 134K |
| 代理商： | U20GL2C53A |
U20GL2C53A
2003-02-17
3
i
F
– v
F
P
F (AV)
– I
o
Tc max – I
o
r
th (j-c)
– t
C
j
– V
R
T
r
t
(
P
F
Instantaneous forward voltage vF (V)
I
Average output rectified current I
o
(A)
A
P
F
Average output rectified current I
o
(A)
M
T
Number of cycles
Time t (s)
Reverse voltage V
R
(V)
J
Surge forward current (non-repetitive)
0
0
40
24
16
8
4
8
12
16
20
24
30°
60°
90°
120°
180°
sin
32
360°
0°
Conduction
angle
Rectangular
waveform
(one cell)
120
1
100
100
60
80
40
20
0
10
50 Hz
60 Hz
One sell
Single phase full
Sine wave
Ta 25°C
10
1
100
10
100
f 1 MHz
Ta 25°C
One cell
0.1
0.0
100
1
10
1.0
2.0
3.0
Tj 150°C
100°C
75°C
25°C
One sell
0.1
0.001
10
1000
1
0.01
0.1
1
10
100
One sell
0
0
160
180°
120°
30°
60°
90°
140
120
100
80
60
40
20
24
20
16
4
8
12
sin
360°
0°
Conduction
angle
Rectangular
waveform
(one cell)
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