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參數(shù)資料
| 型號(hào)： | U20GL2C53A |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type |
| 中文描述： | 東芝高效率二極管堆棧（華大）硅外延式 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 134K |
| 代理商： | U20GL2C53A |
U20GL2C53A
2003-02-17
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
V
FM
I
FM
10 A
1.8
V
Repetitive peak reverse current
I
RRM
V
RRM
400 V
50
A
Reverse recovery time
t
rr
I
F
2 A, di/dt 50 A/ s
35
ns
Thermal resistance
R
th (j-c)
DC Total, Junction to Case
1.5
°C/W
Note: V
FM
, I
RRM
, t
rr
: A value of one cell.
Marking
Standard Soldering Pad
※
1
MARK
20GL2C
TYPE
U20GL2C53A
※
2
A
※
3
Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
※
3
※
1
※
2
2.5
2
2.0
3.2
3.8
8.0
2
6
unit: mm
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