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參數(shù)資料
| 型號(hào)： | U20GL2C53A |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type |
| 中文描述： | 東芝高效率二極管堆棧（華大）硅外延式 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 134K |
| 代理商： | U20GL2C53A |
U20GL2C53A
2003-02-17
1
TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
U20GL2C53A
Switching Mode Power Supply Application
Converter&Chopper Application
Repetitive peak reverse voltage: V
RRM
= 400 V
Average output recified current: I
O
= 20 A
Ultra fast reverse-recovery time: t
rr
= 35 ns (max)
Low switching losses and output noise.
Power surface mount device for thin flat package.
“TFP” (TOSHIBA designation)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
400
V
Average output recified current
I
O
20
A
100 (50 Hz)
Peak one cycle surge forward current
(non-repetitive, sine wave)
I
FSM
110 (60 Hz)
A
Junction temperature
T
j
40 to 150
°C
Storage temperature range
T
stg
40 to 150
°C
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
12-9B1A
Weight: 0.74 g (typ.)
Polarity
③
K
*
①
A1
②
A2
*
: Common Terminal
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