Table 10. Flash characteristics (continued)
C
Characteristic
Symbol
D
Read Once
tRDONCE
—
455
tcyc
D
Program Flash (2 word)
tPGM2
0.12
0.14
ms
D
Program Flash (4 word)
tPGM4
0.20
0.21
0.24
ms
D
Program Once
tPGMONCE
0.20
0.21
0.24
ms
D
Program EEPROM (1 Byte)
tDPGM1
0.02
ms
D
Program EEPROM (2 Byte)
tDPGM2
0.17
0.18
0.20
ms
D
Erase All Blocks
tERSALL
96.01
100.78
125.80
ms
D
Erase Flash Block
tERSBLK
95.98
100.75
125.76
ms
D
Erase Flash Sector
tERSPG
19.10
20.05
25.05
ms
D
Erase EEPROM Sector
tDERSPG
4.81
5.05
6.30
ms
D
Unsecure Flash
tUNSECU
96.01
100.78
125.80
ms
D
Verify Backdoor Access Key
tVFYKEY
—
469
tcyc
D
Set User Margin Level
tMLOADU
—
442
tcyc
C
FLASH Program/erase endurance TL to
TH = -40 °C to 105 °C
nFLPE
10 k
100 k
—
Cycles
C
EEPROM Program/erase endurance TL
to TH = -40 °C to 105 °C
nFLPE
50 k
500 k
—
Cycles
C
Data retention at an average junction
temperature of TJavg = 85°C after up to
10,000 program/erase cycles
tD_ret
15
100
—
years
1. Minimun times are based on maxmum fNVMOP and maximum fNVMBUS
2. Typical times are based on typical fNVMOP and maximum fNVMBUS
3. Maximum times are based on minimum fNVMOP and maximum fNVMBUS
4. tcyc = 1 / fNVMBUS
Program and erase operations do not require any special power sources other than the
DD supply. For more detailed information about program/erase operations, see
the Memory section.
6.3 Analog
Peripheral operating requirements and behaviors
MC9S08PT60 Series Data Sheet, Rev. 3, 4/2012.
Freescale Semiconductor, Inc.
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