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參數(shù)資料
| 型號(hào)： | TSTS7300 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | TSTS7300 - Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| 中文描述： | Infrared Emitters 12 Degree 170mW 950nm |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | TSTS7300 |
www.vishay.com
266
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81048
Rev. 1.8, 04-Sep-08
TSTS7300
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
0.7
0.
8
0.9
1.0
1.1
1.2
V
F
v
e
w
a
V
o
V
)
94 7990
T
am
b
- Am
b
ient Temperat
u
re (°C)
100
8
0
60
40
20
0
I
F
= 10 mA
94
8
004
10
3
10
1
I
F
- For
w
ard C
u
rrent (mA)
10
2
10
4
10
0
0.1
1
10
1000
100
I
W
/
e
t
p
/T = 0.01 , t
p
= 20
μ
s
-
w
e
W
)
e
Φ
I
F
- For
w
ard C
u
rrent (mA)
94 7977
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
- 10
10
T
am
b
- Am
b
ient Temperat
u
re (°C)
50
0
100
0
0.4
0.
8
1.2
1.6
I
e
;
140
94 7993
I
F
= 20 mA
Φ
e
900
950
0
0.25
0.5
0.75
1.0
1.25
-
W
a
v
elength (nm)
1000
94 7994
Φ
e
v
e
w
e
I
F
= 100 mA
λ
0.4
0.2
0
0.2
0.4
I
-
v
e
e
0.6
94
8
021
0.6
0.9
0.
8
0°
30°
10°
20°
40°
50°
60°
70°
8
0°
0.7
1.0
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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