
TSUS4400
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 24-Aug-11
1
Document Number: 81054
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Infrared Emitting Diode, 950 nm, GaAs
DESCRIPTION
TSUS4400 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue tinted plastic package.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm):
3
Peak wavelength:
p
= 950 nm
High reliability
Angle of half intensity:
= ± 18°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
Emitter in transmissive sensors
Emitter in reflective sensors
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8636
PRODUCT SUMMARY
COMPONENT
TSUS4400
I
e
(mW/sr)
15
(deg)
± 18
P
(nm)
950
tr (ns)
800
ORDERING INFORMATION
ORDERING CODE
TSUS4400
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 5000 pcs, 5000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
t
p
/T = 0.5, t
p
= 100 μs
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t
5 s, 2 mm from case
J-STD-051, leads 7 mm,
soldered on PCB
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
VALUE
5
100
200
2
170
100
- 40 to + 85
- 40 to + 100
260
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
t
p
= 100 μs
Thermal resistance junction/ambient
R
thJA
300
K/W