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參數(shù)資料
| 型號(hào)： | TSTS7300 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 激光器 |
| 英文描述： | TSTS7300 - Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| 中文描述： | Infrared Emitters 12 Degree 170mW 950nm |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | TSTS7300 |
Document Number: 81048
Rev. 1.8, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
265
TSTS7300
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
Vishay Semiconductors
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
T
amb
= 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
0
200
400
600
12790
R
thJA
100
300
500
R
thJC
T
am
b
- Am
b
ient Temperat
u
re (°C)
50
125
100
75
25
0
P
w
e
W
)
V
0
20
40
60
8
0
0
50
100
150
200
300
I
w
a
u
r
F
T
am
b
- Am
b
ient Temperat
u
re (°C)
100
94
8
01
8
R
thJC
250
R
thJA
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
F
Breakdown voltage
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
TEST CONDITION
I
F
= 100 mA, t
p
≤
20 ms
I
F
= 100 mA
I
R
= 100 μA
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
=
20 ms
I
F
= 100 mA, t
p
≤
20 ms
I
F
= 100 mA
SYMBOL
V
F
TK
VF
V
(BR)
C
j
I
e
φ
e
TK
φ
e
λ
p
Δλ
t
r
t
r
d
MIN.
TYP.
1.3
- 1.3
MAX.
1.7
UNIT
V
mV/K
V
pF
mW/sr
mW
%/K
deg
nm
nm
ns
ns
mm
5
30
6.3
7
- 0.8
± 12
950
50
800
400
1
4
32
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Rise time
I
F
= 1.5 A, t
p
/T = 0.01, t
p
≤
10 μs
Virtual source diameter
t
p
- P
u
lse D
u
ration (ms)
94
8
003
10
0
10
1
10
1
10
-1
10
-1
10
0
10
2
10
-2
t
p
/T=0.01
I
FSM
= 2.5 A (single pa
u
se)
0.05
0.1
0.2
0.5
I
w
a
u
r
F
94 7996
10
1
10
0
10
2
10
3
10
4
10
-1
I
w
a
u
r
F
4
3
2
1
0
V
F
- For
w
ard
V
oltage (
V
)
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