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參數(shù)資料
| 型號： | TSM55N03 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N溝道增強型MOS管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 132K |
| 代理商： | TSM55N03 |
TSM55N03
2-3
2005/04 rev. B
Electrical Characteristics
T
J
= 25
o
C, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
BV
DSS
30
--
--
V
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 30A
R
DS(ON)
--
7.5
9.0
m
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 30A
R
DS(ON)
--
4.5
6.0
m
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
1.0
1.6
3.0
V
Zero Gate Voltage Drain Current
V
DS
= 25V, V
GS
= 0V
I
DSS
--
--
1.0
uA
Gate Body Leakage
V
GS
= ± 20V, V
DS
= 0V
I
GSS
--
--
± 100
nA
Gate Resisrance
Rg
--
--
--
Forward Transconductance
V
DS
=15V, I
D
= 15A
g
fs
--
--
--
S
Dynamic
Total Gate Charge
Q
g
--
26
--
Gate-Source Charge
Q
gs
--
6.0
--
Gate-Drain Charge
V
DS
= 15V, I
D
= 25A,
V
GS
= 10V
Q
gd
--
5.0
--
nC
Turn-On Delay Time
t
d(on)
--
17
--
Turn-On Rise Time
t
r
--
3.5
--
Turn-Off Delay Time
t
d(off)
--
40
--
Turn-Off Fall Time
V
DD
= 15V, R
L
= 15
,
I
D
= 1A, V
GEN
= 10V,
R
G
= 6
t
f
--
6.0
--
nS
Input Capacitance
C
iss
--
2134
--
Output Capacitance
C
oss
--
343
--
Reverse Transfer Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
134
--
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
20
A
Diode Forward Voltage
Note: 1. pulse test: pulse width <=300uS, duty cycle <=2%
2. Negligible, Dominated by circuit inductance.
I
S
= 20A, V
GS
= 0V
V
SD
--
0.85
1.3
V
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| TSM55N03CP | 功能描述:MOSFET 25V N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM55N03CP R0 | 制造商:SKMI/Taiwan 功能描述:TO-252;30V 55AMP N CHANEL MOSF |
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