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參數(shù)資料
| 型號： | TSM4433DCSRL |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V Dual P-Channel MOSFET |
| 中文描述： | 20V的雙P溝道MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 308K |
| 代理商： | TSM4433DCSRL |
TSM4433D
20V Dual P-Channel MOSFET
Electrical Specifications
Parameter
2/6
Version: A07
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS
= 0V, I
D
= -250uA
V
DS
= V
GS
, I
D
= -250
μ
A
V
GS
= ±8V, V
DS
= 0V
V
DS
= -16V, V
GS
= 0V
V
DS
≤
-5V, V
GS
= -4.5V
V
GS
= -4.5V, I
D
= -3.9A
V
GS
= -2.5V, I
D
= -3.2A
V
GS
= -1.8V, I
D
= -2.6A
V
DS
= -5V, I
D
= -4A
I
S
= -0.9A, V
GS
= 0V
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
-20
-0.45
--
--
-6
--
--
--
--
--
--
--
--
--
--
75
90
105
6.5
- 0.8
--
V
V
nA
μ
A
A
-0.95
±100
-1.0
--
90
110
150
--
-1.2
Drain-Source On-State Resistance
a
R
DS(ON)
m
Ω
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
a. pulse test: PW
≤
300
μ
S, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
g
fs
V
SD
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
15.23
5.49
2.74
882.51
145.54
97.26
--
--
--
--
--
--
V
DS
= -6V, I
D
= -2.8A,
V
GS
= -4.5V
nC
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
pF
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
17.28
3.73
36.05
6.19
--
--
--
--
V
DD
= -6V, R
L
= 6
Ω
,
I
D
= -1A, V
GEN
= -4.5V,
R
G
= 6
Ω
nS
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